Conference Proceeding

            S. Sharmin, U. Sikder, R. Ferdous, Quazi D. M. Khosru, Characterization of interface trap
            density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric,
            IEEE Nanotechnology Materials and Devices Conference (NMDC 2010), Monetery, California,
            USA, pp. 352-355, Oct. 2010. [PDF]

Undergraduate Thesis
            S. Sharmin, U. Sikder, R. Ferdous, Quazi D. M. Khosru, Modeling of In-rich InGaAs
            nMOSFETs with ALD Al2O3 Gate Dielectric: Characterization of Interface Traps and Ballistic
            Performance. (Won The Best Undergraduate Thesis Award (1st prize) in Electronics Group at
            2nd EEE Undergraduate Project Workshop (EUProW) 2011, Dept. of EEE, BUET).